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Welcome to the website of Professor Farrokh Ayazi's research group in the School of Electrical and Computer Engineering at the Georgia Institute of Technology. Research in the Integrated MEMS Laboratory relates to the design, analysis, fabrication, and characterization of Micro and Nano Electro-Mechanical Systems (MEMS and NEMS), with a focus on high Q resonators and resonant gyroscopes. High Q resonators have applications in 'mixed-domain microsystems' such as gyroscopes and accelerometers, low jitter clocks, energy harvesters, biochemical sensors for health and environmental monitoring, as well as wireless communications. On the system side, the group specializes on advance interface circuits and architectures for MEMS and Sensors.
The Integrated MEMS Laboratory (IMEMS) is a unit member of the Center for MEMS and Microsystems Technologies (CMMT) and of the Institute for Electronics and Nanotechnology at Georgia Tech.
New Publication Alert
Resonant Pitch and Roll Silicon Gyroscopes with Sub-micron-gap Slanted Electrodes: Breaking the Barrier toward High-performance Monolithic Inertial Measurement Units
H. Wen, A. Daruwalla, and F. Ayazi
This paper presents the design, fabrication, and characterization of a novel high quality factor (Q) resonant pitch/roll gyroscope implemented in a 40 μm (100) silicon-on-insulator (SOI) substrate without using the deep reactive-ion etching (DRIE) process. The featured silicon gyroscope has a mode-matched operating frequency of 200 kHz and is the first out-of-plane pitch/roll gyroscope with electrostatic quadrature tuning capability to fully compensate for fabrication non-idealities and variation in SOI thickness. The quadrature tuning is enabled by slanted electrodes with sub-micron capacitive gaps along the (111) plane created by an anisotropic wet etching. The quadrature cancellation enables a 20-fold improvement in the scale factor for a typical fabricated device. Noise measurement of quadrature-cancelled mode-matched devices shows an angle random walk (ARW) of 0.63° √h−1 and a bias instability of 37.7° h−1, partially limited by the noise of the interface electronics. The elimination of silicon DRIE in the anisotropically wet-etched gyroscope improves the gyroscope robustness against the process variation and reduces the fabrication costs. The use of a slanted electrode for quadrature tuning demonstrates an effective path to reach high-performance in future pitch and roll gyroscope designs for the implementation of single-chip high-precision inertial measurement units (IMUs).